Japanese Journal of Applied Physics

1. Investigation of Substrate-dependent Characteristics of SnO2 Thin Films with Hall Effect, X-ray Diffraction, X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Measurements
   Byeongdeok Yea, Hajime Sasaki, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 38, No. 4A, pp. 2103-2107 (1999).
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2. Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination
   Hajime Sasaki, Y. Hayashiguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 12A, pp. 6348-6351 (1998).
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3. Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
   Hajime Sasaki, K. Hayashi, T. Fujioka, K. Mizuguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 8, pp. 4301-4305 (1998).
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4. Light Emission and Surface States Annealing on GaAs Metal Semiconductor Field-Effect Transistor
   Hajime Sasaki, M. Abe, K. Hayashi, T. Fujioka, K. Mizuguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 2, pp. 455-461 (1998).
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5. Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation
   Hajime Sasaki, K. Hayashi, T. Fujioka, K. Mizuguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, H. Kasada, K. Ando, Japanese Journal of Applied Physics, Vol. 36, No. 4A, pp. 2068-2072 (1997).
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