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Hajime Sasaki

学術雑誌論文

  1. Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination
    Hajime Sasaki, Y. Hayashiguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 12A, pp. 6348-6351 (1998).
    BibTeX 概要
  2. Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
    Hajime Sasaki, K. Hayashi, T. Fujioka, K. Mizuguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 8, pp. 4301-4305 (1998).
    BibTeX 概要