管理機能

Y. Hayashiguchi

学術雑誌論文

  1. Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination
    Hajime Sasaki, Y. Hayashiguchi, Byeongdeok Yea, Tomoyuki Osaki, Kazunori Sugahara, Ryousuke Konisi, Japanese Journal of Applied Physics, Vol. 37, No. 12A, pp. 6348-6351 (1998).
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